Abstract
We report on the design and simulation using 3D-FDTD simulation of Si3N4-integrated Ge/SiGe multiple quantum wells (MQWs) optical modulators at the optical wavelength of 1310 nm. The effect of fabrication tolerance and wavelength dependence on the optical coupling performance between the Si3N4 waveguide and the Ge/SiGe MQWs structure as well as the optical modulation performance are reported. The results show that Si3N4-waveguide-integrated Ge/SiGe MQWs optical modulators can attain several key performance requirements in terms of extinction ratio, insertion loss, driving voltage, and fabrication variations with a compact footprint favorable for short-range optical interconnect applications.
Highlights
Photonic-Electronic convergence on Silicon (Si) has shown strong potential to become the information technology platform for modern society, in which the appetite for computer power and communications seems unlimited
We report on the design and simulation of butt-coupling low-voltage Si3N4integrated Ge/SiGe multiple quantum wells (MQWs) optical modulators at 1.31-μm using 3D-FDTD
FIG. 2. 3D-FDTD simulation of the optical coupling between the Si3N4 waveguide and Ge/SiGe multiple quantum wells waveguide. (a-b) The best coupling efficiency is obtained when the maximum intensity position of the optical mode in Si3N4 waveguide is well-aligned with that in Ge/SiGe MQWs waveguide. (c) Coupling loss as a function of optical wavelength from 1280 nm to 1330 nm. (d) Coupling loss as a function of vertical position misalignment. (e-p) 3D-FDTD simulation results at different vertical position fabrication misalignment
Summary
Photonic-Electronic convergence on Silicon (Si) has shown strong potential to become the information technology platform for modern society, in which the appetite for computer power and communications seems unlimited. Theoretical investigation of a low-voltage Ge/SiGe multiple quantum wells optical modulator operating at 1310 nm integrated with Si3N4 waveguides
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