Abstract
The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies E which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of to depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.
Highlights
Published: 12 September 2021Due to diamond’s attractive properties, including wideband gap, high breakdown voltage, small dielectric constant, and excellent radiation hardness, it is recognized as a future material suitable for microelectronics devices that can operate at high temperatures and in chemically harsh environments [1]
The first report on this problem appeared in 1989 by Landstrass and Ravi on the electrical conductivity of as-grown CVD diamond layers grown in a hydrogen-rich plasma [8]
We report a study on the influence of diamond hydrogenation level on the conduction mechanism and electrically active defects in polycrystalline diamond layers prepared by the Hot Filament Chemical Vapor Deposition (HF CVD) technique
Summary
Published: 12 September 2021Due to diamond’s attractive properties, including wideband gap, high breakdown voltage, small dielectric constant, and excellent radiation hardness, it is recognized as a future material suitable for microelectronics devices that can operate at high temperatures and in chemically harsh environments [1]. To use diamond layers to realize reliable electronic devices, several problems are still to be solved. The electrical properties of diamonds, including the role of hydrogen, which seems to be one of the most important, is not fully clarified at present but can be the key parameter in the design of electronic devices. The first report on this problem appeared in 1989 by Landstrass and Ravi on the electrical conductivity of as-grown CVD diamond layers grown in a hydrogen-rich plasma [8]. They observed that the resistivity of the diamond could
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