Abstract
In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> ) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> where τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.
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