Abstract
AbstractThe growth of GaN with an AlGaN/GaN heterostructure was attempted on a (111) Si substrate by selective area metal organic vapor phase epitaxy. The GaN obtained was a trapezoidal stripe with (1$ \bar 1 $01) facets on the sides and a (0001) facet on the top. The distribution of the Al composition on the facets was investigated by cathodeluminescence analyses as a function of the position. The surface diffusion of Ga on the (0001) AlGaN facet was studied under various growth conditions. It was found that the diffu‐ sion length is enhanced by elevating the growth temperature or lowering the Al composition. By the temperature dependence of the diffusion length, the activation energy of the Ga species was estimated. The results depended on the Al composition x; 1.23 ± 0.44 eV (x = 0.05), 1.84 ± 0.58 eV (x = 0.10) and 2.72 ± 0.73 eV (x = 0.15). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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