Abstract
The radial distribution of the delta [Oi] for the heavily doped silicon wafers was investigated using X-ray diffraction technique. In order to obtain the correlation between delta [Oi] and X-ray intensity ratio for the lightly doped wafers with different initial [Oi] concentrations, the oxygen concentration using FTIR and X-ray intensity were measured before and after two-step annealing. The relation between delta [Oi] and X-ray intensity ratio showed that it was close to the parabolic correlation rather than the linear correlation. The deviation of this measurement was about ±0.4ppma. This correlation equation could be applied to the heavily doped wafers. It is shown that the radial distribution of the delta [Oi] is not uniform in the radial direction but has the symmetric relation at the wafer center. The bulk micro defect (BMD) density using etching method was measured to confirm these results.
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