Abstract
The composition and structure of oxide films formed on electropolished single crystals of copper were studied for eight different crystal faces, using X-ray diffraction techniques. Particular care was taken to assure the best possible surfaces as concerns smoothness and freedom from contaminants. The effects of crystal face, temperature, pressure, oxide thickness, and contaminants were studied. Cu 2O was found to be the major oxide formed between 170° and 450°C and at pressures from 0.8 mm of Hg to atmospheric. CuO formed above certain minimum thicknesses, the values of which depended on crystal face and temperature. The degree of orientation varied with all the above variables, being, in general, greater for higher temperatures and for lower pressures. The type of orientation (epitaxy) varied with crystal face, but did not vary with the other variables studied. Four different classes of orientations were found for Cu 2O on Cu, and in all cases a [110] direction of Cu 2O was parallel to a [110] direction of Cu. CuO when formed was not oriented.
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