Abstract
Graphite and silicon carbide have been irradiated with helium ions, and, in addition to surface changes, microstructural effects have been studied using transmission-electron microscopy. Ion energies and doses up to 100 keV and 5 × 10 18 cm −2, respectively, have been employed for specimen temperatures in the range 20° —700°C. Graphite crystals are found to deform by twinning, and the density of twins can be correlated to the dimensional changes expected in irradiated graphite. Blistering is only found in very thin films. Silicon carbide exhibits a gas-driven flaking at high temperatures, but at 20° C does not flake. This difference is shown to be related to a temperature-dependence of structural changes produced by the ions.
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