Abstract
Alumina (Al2O3) films were prepared on Al2O3-TiC substrates by RF diode sputtering. The target sputtering power was varied from 4 to 8 kW. The effects of target sputtering power on the structure and mechanical properties of alumina films were investigated. The results show that the structure of the alumina films deposited at all the target sputtering powers is amorphous. However, under the exposure to the electron beam during the Transmission Electron Microscopy (TEM) measurements, the structure of alumina films becomes crystalline. The hardness and elastic modulus of alumina films were found to increase as the target sputtering power was increased.
Highlights
The deposition of metal oxide films by sputtering technique has been widely used in thin film technology because of its simple method to produce films (Kiyotakawa and Shigeru, 1992)
The results show that the structure of the alumina films deposited at all the target sputtering powers is amorphous
The defect is observed on all the film surfaces deposited at different target sputtering powers of 4, 5, 6, 7 and 8 kW
Summary
The deposition of metal oxide films by sputtering technique has been widely used in thin film technology because of its simple method to produce films (Kiyotakawa and Shigeru, 1992). Alumina (Al2O3) film is one of well-known material used in semiconductor devices such as MFIS device, CMOS, MOSFET and magnetic recording head (Qing et al, 2001; Bartzsch et al, 2003; Bahareh et al, 2005) Because of their excellent properties such as low impurities, high dielectric constant compared to SiO2 (Kiyotakawa and Shigeru, 1992; Bahareh et al, 2005), high thermal and chemical stable (Tilo et al, 2003), highest hardness among all oxides, insoluble in inorganic acid and fracture resistance (Jochen et al, 1997). The structure and mechanical properties such as hardness, elastic modulus and wear resistance of the films were investigated
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