Abstract
Since the proposal of the avalanche injection diode, AID, by Gunn, it has become necessary to incorporate fundamental knowledge regarding collision multiplications and other high field, high current density effects into models that approximate actual devices. Previous approaches to the problem have been inadequate for all but a qualitative appreciation of the behavior of the device. This investigation has produced a more comprehensive model for the AID; one that encompasses to some extent both high and low electric field effects, and explains the observed, low-level dynamic response of the device in terms of conductivity modulation effects. The steps leading to a numerical evaluation of the high frequency behavior of the device in terms of geometric and material parameters have been developed and have been used to explain the characteristics of typical units.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
