Abstract
We have developed a new, highly effective method of sintering copper wiring printed in copper nanoparticle inks. Here extremely low oxygen partial pressure necessary for copper oxide reduction is provided by an oxygen pump and atmospheric pressure plasma is used to facilitate grain growth. We have achieved grain growth from 15 nm to about 300 nm at 180 degrees Celsius. The resultant metal is void free and has low 2.6 microhm cm resistivity, close to 1.7 microhm cm for bulk. We have named this process CPS (Cool Plasma Sintering).
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