The search for the most conductive metal for narrow interconnect lines

Abstract

A major challenge for the continued downscaling of integrated circuits is the resistivity increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the potential to mitigate this resistivity bottleneck by either (a) facilitating specular electron interface scattering and negligible grain boundary reflection or (b) a low bulk mean free path that renders resistivity scaling negligible. Recent research suggests that specular electron scattering at the interface between the interconnect metal and the liner layer requires a low density of states at the interface and in the liner (i.e., an insulating liner) and either a smooth epitaxial metal-liner interface or only weak van der Waals bonding as typical for 2D liner materials. The grain boundary contribution to the room-temperature resistivity becomes negligible if the grain size is large (>200 nm or ten times the linewidth for wide or narrow conductors, respectively) or if the electron reflection coefficient is small due to low-energy boundaries and electronic state matching of neighboring grains. First-principles calculations provide a list of metals (Rh, Pt, Ir, Nb, Ru, Ni, etc.) with a small product of the bulk resistivity times the bulk electron mean free path ρo × λ, which is an indicator for suppressed resistivity scaling. However, resistivity measurements on epitaxial layers indicate considerably larger experimental ρo × λ values for many metals, indicating the breakdown of the classical transport models at small (<10 nm) dimensions and suggesting that Ir is the most promising elemental metal for narrow high-conductivity interconnects, followed by Ru and Rh.