Abstract
Zinc oxide materials with outstanding performance are the broadband gap semiconductor, and make it a number of important subjects and a wide range of applications. In this paper, a Co-doped ZnO film grown by electrodeposition shows room-temperature ferromagnetic properties after the ammine plasma treatment. The XPS spectra show that the Co ions have a chemical valence of 2+ and a few nitrogen atoms was incorporated into ZnCoO film during the treatment process to occupy oxygen positions. The electronic properties also give evidence that nitrogen is incorporated into ZnCoO film. So the ferromagnetism is mediated though the p-d exchange interaction between nitrogen induced carriers and Co atoms.
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