Abstract
The thorough investigation of the GeSn system was able to present some new (or intermediary) properties that, if properly applied, can provide interesting outcomes. One of these refer to the crystallization of amorphous Ge as induced by the presence of Sn, also known as metal-induced crystallization. According to it, depending on the relative composition of the GeSn system Ge crystallites can be produced at rather low temperatures in a gradual and very controllable way. This forms the basis of this work that investigated the Sn-induced crystallization of sputter-deposited amorphous Ge films − as a function of the Sn concentration (∼0−30 at.% range) and temperature of thermal annealing (from 25 to 600 °C). In all cases, the atomic structure of the films was investigated by Raman spectroscopy that corroborates the influence of Sn atoms in reducing the crystallization temperature and improving the quality of the Ge crystallites. Accordingly, this work suggests the suitability of the GeSn system in producing cost-effective poly-crystalline Ge films.
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