Abstract

The 2D molybdenum disulfide (MoS2) based short-channel FET has shown remarkable performance, and there is an increasing demand for research on the factors that affect the device characteristics. Although interface trap charges (ITCs) have been observed during various experimental studies on MoS2-oxide interfaces, it is still unclear how this is affecting device-level performance. To fill this gap, the present work focuses on the impact of ITCs in MoS2 Thickness Engineered TFETs (MoS2 TE-TFET) by considering both positive (donor) and negative (acceptor) types of ITCs at the MoS2-HfO2 interface. The different ITC density ranges, such as Nf = −4 × 1012cm−2 to +4 × 1012 cm−2 and Nf = −4 × 1011cm−2 to +4 × 1011cm−2 are considered to explore ION, Vth, IOFF, ION/IOFF, transfer characteristics, energy band diagram, electric field, potential and maximum electron mobility device parameters. Additionally, a comparison of the ION/IOFF ratio, Vth, and electron mobility with existing literature is presented.

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