Abstract
The effect of hydrogen exposure and subsequent annealing of F-implanted oxides on the generation of donor-type Si SiO 2 interface states was studied. F appears to reduce the amount of H in the oxide, which otherwise is instrumental in producing these hydrogen-related states. This elimination of hydrogen is of catalytic nature; formation of the mobile species HF is suggested. Confinement of these F species by the gate is essential to prevent their escape from the oxide.
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