Abstract

The article describes the experience of device-technological modeling in TCAD of the structure of the MOSFET two-drains magneto transistor. Using numerical calculation the influence of the substrate doping concentration and operating modes to the relative current magnetosensitivity of the MOSFET two-drain magneto transistor is studied. It is shown that the magnetosensitivity function has a maximum in the gate-source voltage range. The optimal of the doping concentration in the substrate for the best magnetic sensitivity was established. The dependence of drain currents and relative current sensitivity on gate-source voltage at different substrate-source voltage is given.

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