Abstract
The recovery mechanism of the light-induced instability of amorphous InGaZnO thin-film transistors was examined. Following light illumination, the bare devices displayed more dark recovery of the threshold voltage (Vth) shifts than the ones encapsulated in nitrogen ambient. This was attributed to the adsorption of more oxygen (O2) in the back channel of the bare devices. Further, much more recovery was also observed for the bare devices than the nitrogen-encapsulated ones under positive gate bias. This implied the recovery effect under gate bias could be further enhanced because the induced electrons could greatly increase the adsorption of more O2 for the bare devices.
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