Abstract

The high- and low- frequency electro-optic coefficients r222 of In-doped lithium niobate (LN) and the corresponding dielectric permittivity as well, have been experimentally determined and compared with the results obtained in undoped congruent LN crystals. Compared to pure congruent lithium niobate, a low acoustic contribution of the electro-optic and dielectric properties are originally found in indium (In)-doped congruent lithium niobate (LN:In) crystals in the low indium concentration range [0.12-1.7 mol%]. All reported results confirm that the LN:In is a very promising candidate for several non-linear devices as Pockels cells for laser Q-switching.

Highlights

  • It is well established that the electro-optic effect is one of the most convenient properties that is could be exploited to obtain fast Q switching

  • Compared to congruent composition where we found r222a = r222T – r222S = 2.7 ± 0.4 pm/V, we can observe a small dependence of the acoustic contribution in the case of the In-doped lithium niobate (LN)

  • We are able to estimate the acousto-optic contribution to the electro-optic effect, ra from the elasto-optic (Pockels) pE ijkl at constant electric field, and from the piezoelectric d kij tensors and the electromechanical contribution to the static permittivity, i.e. the difference Δεij between the low- and the high- frequency values of dielectric permittivity recorded on both sides of the acoustic resonances [43]

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Summary

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The r22 electro-optic coefficients in indium-doped congruent lithium–niobate crystals. This content has been downloaded from IOPscience. Ser. 879 012005 (http://iopscience.iop.org/1742-6596/879/1/012005) View the table of contents for this issue, or go to the journal homepage for more. Self-confined beams in erbium-doped lithium niobate M Alonzo, F Pettazzi, M Bazzan et al. Thermally tunable 100 GHz spaced four-wavelength electro-optic filter based onaperiodically poled lithium niobate Zi Leng, Xiaoqi Zeng, Haibo Tang et al. NAMES'16 IOP Conf. Mustapha Abarkan1,2,*, Anush Danielyan, Sasha Sewastianow, Michel Aillerie, Nicéphore Théofanous, Sergey Kostritskii, Edvard Kokanyan

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Angle of analyzer β Applied Voltage V
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