Abstract
In recent integrated circuit (IC) process development, planarization is an essential requirement. The low temperature growth, good step coverage and selective growth make the liquid phase deposition (LPD)-SiO2 have several applications in IC fabrications, such as completely planarized multilevel interconnections and trench isolation, etc. In the case of the selective growth of LPD-SiO2, there are spherical protrusions at the corners of silicon nitride mask. We propose a model to explain it and therefore control the planarized selective growth of LPD-SiO2.
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