Abstract
Dark conductivity, photoconductivity, index of refraction, absorption edge, and EPR of the layers of amorphous silicon (a-Si) doped with the isovalent germanium impurity are studied. The properties of a-Si are found to change nonmonotonically with increasing germanium concentration. At germanium concentrations of ≈ 3 at% a minimum of the refraction index and the dark conductivity as well as a maximum of the photosensitivity and the band gap (mobility gap) of a semiconductor are observed. Amorphous silicon with such a concentration of germanium is similar to a-Si:H in its properties. [Russian Text Ignored].
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