Abstract
High-temperature gradients at the solid–liquid interface during the growth of W single crystals from the melt by electron beam floating-zone melting do not allow one to grow high-purity W single crystals free from small-angle boundaries with misorientation angles less than 3–5 min of arc and subgrain dislocation densities of less than 2×10 6 cm -2. W single crystals with a more perfect crystallographic structure can be obtained by strain annealing. In such single crystals there are no subboundaries and the dislocation density is about 8×10 4 cm -2.
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