Abstract
Electron diffraction, electron microscopy, optical transmittance and microgravimetric techniques have been combined to study the oxidation of (100) single-crystal films of copper grown on (100) sodium chloride substrates at 325°C. The single-crystal films contained the usual “void” areas. Films 500 Å thick or less can be oxidized to CuO 0.67 readily at temperatures of 120°–180°C in 100 torr of oxygen. The oxide shows marked orientation but is not a single crystal. Oxidation to CuO yields polycrystalline oxide. A mechanism for forming CuO 0.67 from copper that is consistent with all the data involves an initial oxidation in which the “voids” are filled with oxide. The controlling rate then shifts to oxidation from the top of the grains towards the substrate interface until the copper is completely oxidized to CuO 0.67.
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