Abstract
The effects of silicide-blocked (SAB) oxide and contact etch stop layer (CESL) on the retention characteristic of one-time programming (OTP) nonvolatile memory (NVM) are experimentally evaluated through various deposition process conditions. The OTP retention is characterized after a baking condition of 250°C for 4 hrs. Our results suggest the NH3 and SiH 4 gas base deposition process effectively make improvements on OTP data retention. And the thicker the SAB film, the better the data retention.
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