Abstract
In this paper, we employ the results of spectral measurements performed using XPS, Raman scattering and UV-VIS techniques to investigate the relationship between the optical band gap and the structural composition of amorphous carbon nitride thin films.From the point of view of the electronic structure of amorphous carbon nitride thin films with relatively high nitrogen content (N/C ≥ 0.1) the results have shown that the case where the C(sp2)–N and C(sp3)–N bonds concentrations are equal is an approach to the case of amorphous carbon (a-C), and therefore the optical band gap is controlled only by the π electron delocalization in C(sp2)–C bonds. This was demonstrated by investigating the direct proportion between Raman ratio ID/IG and 1/Eg2.
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