Abstract
New values for the quantum yield of silicon in the 3 to 5 eV spectral region are derived from reflectance and photoresponse measurements on oxide/p+/n/n+ photodiode structures. The new values fall between high and low estimates derived from a recent model of impact-ionization phenomena due to Alig, Bloom, and Struck. A prominent peak in the new spectrum near 4.5 eV is attributed to the way the photon energy in excess of the band-gap energy is distributed between the photogenerated electrons and holes at different photon energies due to the band structure.
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