Abstract
ABSTRACTThe Ti/Al2O3 system is being considered for advanced aerospace applications and is important in microelectronics where Ti is used for metallization on Al2O3 substrates. We have studied the intrinsic reactivity of Ti with the R-plane (1012) surface of α-Al2O3 by x-ray photoemission spectroscopy (XPS) and transmission electron microscopy (TEM) techniques. XPS results indicate that a for deposition of several monolayers of Ti at 25 °C, the Ti reduces the Al2O3 surface to produce Ti-O bonds. At 1000 °C the Ti reduces the Al2O3 to produce Ti-O and Ti-Al bonds. Cross-section TEM specimens were prepared from 200 nm thick Ti films deposited on Al2O3 at 25 and 800 °C to observe the interface region. In samples deposited at 25 and 800 °C, without further annealing, no reaction zone could be seen in the TEM. Ordered Ti3Al (78 ± 5 Ti, 16 ± 3 Al and 6 ± 3 0 wt pct) was observed in a sample deposited at 25 °C and annealed at 800 °C for 2 hours.
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