Abstract
The manipulation of temperature coefficient of resistance (TCR) in TaN thin-film resistor (TFR) was demonstrated by electrical measurement and analysis through supercritical carbon dioxide (SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) fluid treatment for the first time. The negative TCR value of TaN TFR changes to positive TCR value through annealing process due to the growth and merge of TaN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> grain. After SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> treatment, the positive TCR value was changed back to negative TCR value in TaN TFR. The TaN grain boundary isolated by dehydroxyl effect of SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> fluid treatment causes the current conduction mechanism changed to hopping conduction from ohmic conduction.
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