Abstract
Abstract The low-temperature Hall effect of cadmium sulphide has been measured at 14 K after 200 keV electron irradiation and isochronal annealing. The carrier concentration was increased by electron irradiation at a temperature near 20 K. During annealing there appeared a small reverse recovery around 20 K and a major normal recovery over a subsequent wide temperature range. Approximately 90% of the electron-induced change was recovered up to 80 K. From the analysis of the plot of carrier concentration against 1/T before and after irradiation it has been concluded that shallow donors having an ionization energy of about 9 meV were introduced by the electron irradiation and were annihilated by the anneals above 30 K. The donors introduced are considered to be sulphur vacancies. It is assumed that at 14 K sulphur interstitials migrate rapidly into sinks.
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