Abstract
We have grown β-(In0.04Ga0.96)2O3 thin film by pulsed laser deposition(PLD) on Sn doped β-Ga2O3(-201) substrates and fabricated the Au/Ni/β-(InGa)2O3 Schottky diodes on it. The electrical characteristics of the diodes were investigated within the temperature range from 300K to 400K. Based on the theory of thermal electron emission (TE), the extracted barrier height ϕb and ideality factor n are strongly temperature dependent. ϕb increasing from 0.83 eV to 0.93 eV while n decreasing from 2.82 to 1.83, respectively. By taking the Gaussian distribution of the Schottky barrier height into account, the average barrier height was calculated to be 1.18 eV with a standard deviation of 0.135 V and the effective Richardson constant A* was also determined to be 42.34 Acm−2K−2.
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