Abstract
Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.
Highlights
Self-assembled Ge quantum dots and well arrangements have attracted a lot of attention due to their ability of being integrated into silicon-based optoelectronic and nano-electronic devices [1,2]
One of the motivations behind these efforts is to form devices and functions that take advantage of quantum confinement effects for electronic and optical applications, such as light emitting diodes, tunneling diodes, detectors, etc. [3,4], where Ge quantum dots were formed by ultra-high vacuum chemical vapor deposition (UHV-CVD)
excimer laser annealing (ELA) has been widely used in low temperature poly-Si thin film-transistor processes for flat panel display products [9]
Summary
Self-assembled Ge quantum dots and well arrangements have attracted a lot of attention due to their ability of being integrated into silicon-based optoelectronic and nano-electronic devices [1,2]. One of the motivations behind these efforts is to form devices and functions that take advantage of quantum confinement effects for electronic and optical applications, such as light emitting diodes, tunneling diodes, detectors, etc. The Ge dots multilayer solar cell made by molecular beam epitaxy was reported [5]. Another motivation is to find costeffective methods for forming nanoscale devices without using expensive lithography techniques. Among the different ways in producing quantum dots [6-8], excimer laser annealing (ELA) to induce self-assembled Ge islands is an innovative technique. An advantage of laser annealing is the determination of dot localization on the surface
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