Abstract
The influence of the strong magnetic and electric fields, that are normal to heteroplanes, on impurity electron (hole) states in the quantum well is considered. The effect of the strong magnetic field on the electron is assumed to be much greater than an influence of the impurity centre. The case when the influence of the strong electric field is of an order of the size-quantization effect is studied. The electric field inversion effect, i.e. changing the impurity electron state with changing the electric field direction for the opposite one, is discussed. The expression for the inversion energy level shift is presented in an integral form. The variation of the inversion shift of both the ground and the first excited levels with a position of the impurity center is calculated for various electric field magnitudes. Estimations of these shifts for GaAs crystal is carried out.
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