The influences of the properties of impurities and defects on the dark I-V characteristic curve and output parameters of c-Si solar cells

Abstract

The influences of the coating ratio of electrode, doping concentration of substrate and type of impurities and defects on the dark I-V characteristic curves and output parameters of c-Si solar cells are studied by finite difference method and the dark I-V characteristic curves under different conditions are analyzed by their ideal factors, the results show that: the dark current values under the same bias voltage will increase with the increasing of the coating ratio of electrode or doping concentration of substrate; the influences of donor-like, acceptor-like and recombination-center-like impurities and defects on the dark I-V characteristic curves have threshold effects; the parameters of the impurities and defects smaller than their corresponding threshold will have no obvious influences on dark I-V characteristic curves; the acceptor-like impurities and defects on the surface of c-Si solar cells have no influences on their dark I-V characteristic curve, but the donor-like and recombination-center-like impurities and defects have strong influences on their dark I-V characteristic curve; the variations of the output parameters of c-Si solar cells are analyzed in detail under the different properties of the impurities and defects inside and on the surfaces of c-Si solar cells.