Abstract
The homoepitaxial growth of 4H-SiC epilayers were conducted by hot-wall vertical chemical vapor deposition (CVD). The dependence of silicon droplets on the growth temperature on 4° off-axis 4H-SiC substrates and its mechanism have been investigated, which were characterized by Nomarski optical microscope, scanning electronic microscope (SEM) and micro-Raman spectrometer. The results indicated that the silicon droplets were highly crystalline. It was also found that the silicon droplet generation could be suppressed by increasing the growth temperature, though the growth rate declined slightly.
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