Abstract
Up to 30 nm thick Ge layers were grown on Si(100) by using Sb as a surfactant and were investigated by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, transmission electron microscopy, and confocal laserscan microscopy. The introduction of a surfactant alters the growth mode drastically from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. Smooth and strained Ge layers, with a thickness much larger then the critical thickness for commensurate growth, are achievable. The antimony monolayer mainly segregates on top of the grown germanium layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
