Abstract
AbstractThis paper evaluates the characteristics of a 0.35‐µm WSi gate HIGFET which uses SiON insulation films for passivation, and also evaluates their reliability. The SiON film was formed by applying plasma CVD using the refractive index of SiON film for the film composition. The best FET characteristics have been obtained with a SiON film with a refractive index of 1.58. The authors have described [1,2] a deterioration mode of 0.35‐µm HIGFETs in which the gate leak current increases in the gate‐drain reversed‐bias stress test. No deterioration occurred this time in the same test with the SiON film having a refractive index of 1.58. It is concluded from the test results of spectroscopic ellipsometric analysis, Auger electron spectroscopy, and XPS that this excellent result is due to the thermal stability of the film, and not to characteristics such as film composition and SiON/GaAs reaction; and that SiON films with a refractive index other than 1.58 often form As, AsO, As2O3, and Ga2O3 on the interface between the insulation film and the GaAs. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(5): 50–58, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1107
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