Abstract
Two series of Co2MnAl (CMA) and Co2MnAlO (CMAO) thin films deposited on Si (100) coated with thermo-SiO2 by using two CoMnAl targets were studied. One target is oxygen-free and the other one contains 0.8% oxygen. The properties of the two series CMA (O) films strongly depend on deposition conditions and seed layers. The oxygen impurity is a key factor to influence the properties. It would obviously increase the thickness of magnetic dead layer, weaken the magnetic anisotropy, and significantly decrease the spin polarization in CMA film. The magnetoresistance ratios of IrMn pinned top-type magnetic tunnel junctions by utilizing CMAO/CMA as the bottom ferromagnetic electrode were 19% and 68%, respectively.
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