Abstract
ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method. Microstructure characteristics such as crystalline structure and surface morphology of as-deposited ITO thin films were studied by using X-ray diffraction spectroscopy, transmission electron microscopy and field emission scanning electron microscopy, as well as the index of sheet resistance, carrier concentration, carrier mobility and transmission in visible spectrum were tested by means of Hall effect tester and UV-VIS-NIR spectrophotometer, respectively. The influence and impact mechanism of microstructure characteristic on electrical properties of as-deposited ITO thin films were investigated and analyzed in detail.
Highlights
Experiment2.1 Sample preparation ITO thin films were deposited by ion-assisted electron beam evaporation (EB)
ITO thin films were deposited on sapphire substrates under different deposition parameters via ion-assistant electron beam evaporation method
The calculation result shows that the average grain size of the ITO thin films increases with the increasing of deposition rate, while the variation of oxygen flow rate shows no obvious influence on the grain size
Summary
2.1 Sample preparation ITO thin films were deposited by ion-assisted electron beam evaporation (EB). O2 with high purity was introduced into the cathode of Hall ion source and was ionized by high-speed electron bombardment, the O- beam formed was utilized to ion cleaning and ion assistance during the deposition. 270° E-type electron gun was used as the thermal source, the deposition rate was adjusted by regulating the current of electron beam. The oxygen flow rate was fixed at 45sccm, and the ITO thin films were deposited at deposition rates of 1Å/s, 2Å/s, 3Å/s, and 4Å/s. Samples were marked as: R1~ R4; Secondly, the deposition rate was fixed at 2Å/s, and the depositions were conducted under oxygen flow rates of 30, 40, 50 and 60sccm, respectively. The transmittance of ITO thin film in the visible spectrum was measured by Shimadzu UV-3600 UV-VIS-NIR spectrophotometer with a resolution of 1 nm
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