Abstract
The effects of hydrogen plasma treatment and 300 keV proton implantation on the electrical properties of AlGaAsSb layers matched to GaSb are studied. It is shown that the hydrogen introduced from a plasma can form electrically neutral complexes with donors and acceptors in this material system. The results can be explained under the assumption that the hydrogen has an acceptor and a donor level in AlGaAsSb and an estimate of the depth of these levels as a function of composition is made. It is also shown that after heavy irradiation of AlGaAsSb with protons the material becomes p type with the hole concentration of about 1016 cm−3, independent of the initial doping level in the starting material.
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