Abstract
The temperature dependences of the Seebeck coefficient, and electrical and thermal conductivities of bulk hot-pressed Sb-doped n-type Mg2Si and Mg2Si0.8Sn0.2 samples were measured in the temperature range from 300 K to 850 K together with the Hall coefficients at room temperature. The features of the complex band structure and scattering mechanisms were analyzed based on experimental data within the relaxation-time approximation. Based on the obtained model parameters, the possibility of improvement of the thermoelectric figure of merit due to nanostructuring and grain boundary scattering was theoretically analyzed for both Mg2Si and the solid solution.
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