Abstract
The change in transition temperature for thin Sn and Tl films has been measured after deposition of dielectric substances. The change in transition temperature is inversely proportional to the thickness of the superconducting film and relatively independent of the thickness of the dielectric film. When SnS or Tl2Se is deposited on Sn films, the transition temperature is depressed. When TICl or Tl2Se is deposited on Tl films, the transition temperature is increased. When S is deposited on Tl films, there is no initial change inT c ; however,T c is appreciably increased after annealing. A possible explanation for this effect is the reduction of the free electron concentration in the metal through the formation of the contact potential between the dielectric and the metal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
