Abstract
In the study of block copolymers, many parameters need to be adjusted to obtain good phase separation results. Based on block copolymer polystyrene-b-polycarbonate and homopolymer polystyrene, the effects of the annealing atmosphere, blending ratio, and molecular weight on phase separation were studied. The results show that annealing in air can inhibit the occurrence of phase separation. In addition, snowflake patterns are formed during phase separation. The blending ratio affects the quality of the pattern. The molecular weight affects the size of the pattern, and the size increases as the molecular weight increases. In this article, the influence of process conditions and materials on phase separation was discussed, which has laid a solid foundation for the development of block copolymer self-assembly in the future.
Highlights
IntroductionMore and more attention has been paid to the self-assembly of block copolymers because it has great application prospects in the field of integrated circuits, biology, and many other fields
Molecular Weight on the PhaseIn recent years, more and more attention has been paid to the self-assembly of block copolymers because it has great application prospects in the field of integrated circuits, biology, and many other fields
More and more attention has been paid to the self-assembly of block copolymers because it has great application prospects in the field of integrated circuits, biology, and many other fields
Summary
More and more attention has been paid to the self-assembly of block copolymers because it has great application prospects in the field of integrated circuits, biology, and many other fields. In the field of integrated circuits, nanostructures in electronic devices are fabricated by photolithography. Due to the diffraction limit of the radiation source, lithography faces inherent challenges in reducing the critical size to less than 20 nm. We need to discover a new technology to replace it. According to the international technology roadmap for semiconductors, the solutions of next-generation lithography mainly include extreme ultraviolet lithography [1,2,3], nanoimprint lithography [4,5,6], and block copolymer self-assembly [7,8]. Extreme ultraviolet lithography is the most widely used technology. Its manufacturing cost is the highest [9]
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