Abstract
An approach to control the interpore distances and nanopore diameters of 150-nm-thick thin aluminum films is reported here. The Al thin films were grown by sputtering on p-type silicon substrate and anodized with a conventional anodization process in a phosphoric acid solution. It was found that interpore distance and pore diameter are related to the aluminum grain size and can be controlled by annealing. The grain contours limit the sizes of alumina cells. This mechanism is valid for grain sizes supporting only one alumina cell and consequently only one pore.
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