Abstract
The dependence of the electron effective mass m* on the band gap E0 has been studied in the quaternary alloy GaxIn1-xAsyP1-y (y=2.2x) for the two compositions y=0.55 and y=1.0. As hydrostatic pressure was applied m* was measured by magnetophonon resonance while E0 was determined by photoconductivity techniques. It was observed that the rate of increase of m* was much larger than predicted by the three-band or multiband formulations of the k.p theory based on the authors experience of III-V compound semiconductors. It has been tentatively concluded that alloy disorder profoundly affects the k.p interaction in semiconductors.
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