Abstract
In this article, we employ a numerical calculation to determine the Pm2O3-Si p-n junction betavoltaic electrical performance using Finite Difference Minority Carrier Diffusion Equation (FD-MCDE) method. In order to verify the method, the comparation result is presented according to the basic planar design in the experimental study as well as the analytical calculation. At 0.8 Ci/cm2 and 1 Ci/cm2 activity content, we obtained 8.04% and 7.03% error in short-circuit current calculation, respectively. Furthermore, the variation in the number of n-type and p-type arrays was done to detect the shifting effect in the simulation result. The V oc, Vmp , and FF for both activity contents have achieved the optimum values using 500 x 500 grids, despite of having more iterations to reach the desired convergency level.
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