Abstract
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.
Highlights
Diamond is a promising wideband gap semiconductor for high-power devices, owing to its high breakdown electric field, high thermal conductivity, and high bulk carrier mobility
The hot filament was made from tungsten wire in the form of coil made from a wire with 0.25 mm in diameter placed about 6 mm above the substrate
This should be reflected in the Raman spectra, Figure 2
Summary
Diamond is a promising wideband gap semiconductor for high-power devices, owing to its high breakdown electric field, high thermal conductivity, and high bulk carrier mobility. Metal semiconductor field effect transistors (MESFETs) based on diamond have shown a high breakdown voltage of over 1.5 kV and high thermal stability up to 573 K [3]. The use of the excellent properties of the diamond for the construction of electronic devices is limited mainly by the inability to obtain shallow acceptors and donors that can facilitate effective conductivity at room temperature [4,5]. It turned out that it is possible to control the electrical properties using nitrogen doping in the case of ultrananocrystalline diamond layers [6,7].
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