The gas phase molecular structure of silyl formate, determined by electron diffraction

Abstract

The structure of silyi formate, HCOOSiH 3, in the gas phase is determined by electron diffraction. The principal bond lengths and angles ( r a) are r(Si-O) = 169.5 ± 0.3 pm, r(C-O) = 135.1 ± 0.6 pm, r(C  O) = 120.9 ± 0.7 pm, ∠(C-O-Si) = 116.8 ± 0.5°, ∠(OC-O) = 123.5 ± 0.5°. The silyi group is twisted by 21° away from the planar cis conformation but there is nevertheless a very short (286.5 ±1.0 pm) non-bonded Si ·O contact.