Abstract
The initial growth of ultrathin aluminum oxide film during the oxidation of NiAl(100) was studied with scanning tunneling microscopy. Our observations reveal that the oxide film grows initially as pairs of a double-row stripe structure with a lateral size equal to the unit cell of θ-Al2O3. These double-row stripes serve as the very basic stable building units of the ordered oxide phase for growing thicker bulk-oxide-like thin films. It is shown that the electronic properties of these ultrathin double-row stripes do not differ significantly from that of the clean NiAl surface; however, the thicker oxide stripes show a decreased conductivity.
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