Abstract
Microstructures with different spike heights are fabricated on the silicon surface by using femtosecond laser pulses. It is proved that the spike height of microstructured silicon has specific relations with fabrication parameters, including single pulse energy, pulse number, proportional relation between single pulse energy and pulse number under the same laser fluence, and ambient gas. Additionally, the light absorptions of microstructured silicon with different spike heights are compared. All these results are important for the optimal fabrication of surface-microstructure photovoltaic materials, such as solar cell, infrared sensor, etc.
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