Abstract
Tracer penetration profiles in NiO diffusion specimens were determined using the radio-frequency sputtering technique. The sources of error introduced by the technique were investigated, and a comparison was made between the profiles determined using this method and those determined in similar specimens using a polishing technique. With sectioning by sputtering it is possible to analyse diffusion profiles having Dt > 10 -13 cm 2, and diffusion coefficients greater than 10 -19 cm 2 s -1 can be measured with an accuracy to ±10%.
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