The electronic transport characteristics subsequent to linear doping with nitrogen or boron in (8,0) single-walled carbon nanotubes

Abstract

The electronic transport properties of single-walled carbon nanotubes (SWCNTs) have long been a focus of attention, with the potential for modulating their conductivity through doping. Commonly adopted doping methods, such as point doping and asymmetric doping, have been prevalent in research, are very common in research, while there is relatively little research on doping of impurity atoms in crystal columns along the tube axis direction, and there is also a lack of exploration related to their electron transport. This study delves into the influence of B/N linear doping on (8,0) carbon nanotube devices, systematically analyzing its effects on device band structure, density of states, current characteristics, and transmission eigenstates. The elucidation of the contributions of distinct doping atoms and the quantity of doping lines to conduction band transport near the Fermi level is approached through the lens of band theory. This analysis provides valuable insights into the nuanced impact of linear doping on the electron transport dynamics in carbon nanotubes. Additionally, a linear regression methodology is employed to discern the quantitative relationship between the number of linear dopants and resultant current values, revealing discernible patterns in the variation of current with the quantity of nitrogen atoms. Such insights contribute to a more profound understanding of the mechanisms underlying the enhancement of conductivity in carbon nanotubes facilitated by multi-line doping in semiconductor devices.